(Nikkei BP Group)
(No.1 High-Tech News Site in Japanese)
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| Matsushita Electric Developing GaN-based Violet Laser
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February 10, 1999 (TOKYO) -- Matsushita Electric Industrial Co., Ltd.
announced that it succeeded in continuously operating a gallium-nitride
(GaN)-based violet semiconductor laser at room temperature.
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The wavelength is about 400nm, and its threshold voltage and current
are 11.4 V and 440 mA, the company said. Details of its projected operating
life were not disclosed.
The company said that the beam spot is 440nm in diameter. In the case
of earlier lasers, the output light spectrum had a broad full width
at half maximum (FWHM) and a less focused profile, a Matsushita official
said.
Matsushita will develop a light source for a new DVD device that uses
a disk 12cm in diameter to accommodate more than 15GB of data on a side.
Use of the new laser will help solve problems such as noise control
and limited operating periods.
More information in English is available at: http://www.panasonic.co.jp/corp/news/official.data
/data.dir/en990203-1/en990203-1.html
Related story: Nichia
Chemical Violet Laser Boosts DVD Storage Capacity
(Nikkei
Electronics)
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