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  • Samsung Develops 4Gb DRAM Production Technology
  • June 11, 1998 (SEOUL) -- Samsung Electronics Co., Ltd. said it developed technology for producing 4Gb dynamic random access memory (DRAM) microchips, with much greater capacity than existing 64Mb DRAMs.
    The world's largest maker of memory microchips announced the development of its new 0.13-micron circuit processing technology at the VLSI Symposium held in Hawaii.

    Samsung Electronics plans to begin full-scale production of the 4Gb DRAMs starting in 2003.

    The 0.13-micron circuit technology, half the circuit width of 64Mb DRAMs, is still unavailable to rival chip makers, including Intel Corp. and NEC Corp., Samsung said.

    (Maeil Business Newspaper)

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    Updated: Wed Jun 10 16:50:08 1998