(Japanese Site)
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| Samsung Develops 4Gb DRAM Production Technology
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June 11, 1998 (SEOUL) -- Samsung Electronics Co., Ltd. said it
developed technology for producing 4Gb dynamic random access memory
(DRAM) microchips, with much greater capacity than existing 64Mb
DRAMs.
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The world's largest maker of memory microchips announced the
development of its new 0.13-micron circuit processing technology at
the VLSI Symposium held in Hawaii.
Samsung Electronics plans to begin full-scale production of the 4Gb
DRAMs starting in 2003.
The 0.13-micron circuit technology, half the circuit width of 64Mb
DRAMs, is still unavailable to rival chip makers, including Intel
Corp. and NEC Corp., Samsung said.
(Maeil Business Newspaper)
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