 (Nikkei BP Group)
 (No.1 High-Tech News Site in Japanese)
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Intel to Invest US$100M in Samsung Electronics
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January 25, 1999 (SEOUL) -- Samsung Electronics Co., Ltd. said it signed
a letter of intent with Intel Corp. for the U.S firm to invest US$100
million into the Korean electronics company.
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According to the deal, Intel will undertake US$100 million worth of CBs
to be newly issued by Samsung Electronics.
"The capital will be injected into establishing production facilities
for 72Mb, 144Mb and 288Mb Rambus DRAMs," said a Samsung official, adding
the company has already launched the development of second-generation
Rambus DRAMs, which will have a circuit design of 0.18 micron meters.
"Through this deal, we hope to strengthen our ties with Intel in developing
next-generation memory chips," he said.
Intel, which has already participated in the equity of Samsung Electronics'
memory chip production plant in Austin, Tex., seems to have decided
on the investment in its strategy to secure a stable supply line of
Rambus DRAMs to prepare for the next-generation PC market.
The two companies plan to close the deal by the beginning of next month,
as soon as they negotiate the details and receive approval from their
respective board members and the government.
Related story: Intel
to Invest US$100 Million in Samsung
(Maeil Business Newspaper, Korea)
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