(Japanese Site)
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| Ele Hitachi to Produce 0.18-micron, Cell-based ICs
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April 14, 1998 (TOKYO) -- Hitachi Ltd. said it will start
producing cell-based ICs, a kind of application specific
integrated circuit, using 0.18-micron complementary metal oxide
semiconductor (CMOS) process technology.
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The company will start accepting orders for products in June
1998.
The gate length of a transistor is 0.2 micrometers, and effective
channel length is 0.18 micrometers.
High integration, low-power consumption and high performance have
been attained using the leading-edge technology. Its integration
density has been raised up to 25 million gates per chip, five
times that of the company's current products using 0.35-micron
gate length, company officials said.
The new product's power consumption has been reduced to 0.04
microWatt per gate MHz at 1.8V, one-fifth that of current
products. An optional function can be installed to reduce its
stand-by power consumption.
With the gate delay time of 75 picoseconds and maximum operation
frequency of 400MHz, its performance has been raised about three
times that of current products, company officials said. It has
five metal layers.
The company has prepared a library of about 600 kinds of cells to
make logic synthesis effectively, memory compilers and simulation
models that enable users to design RAMs and ROMs coherently on a
workstation and other software.
A 100-296 pin quad flat package (QFP), a QFP with heat spreader,
a 352 pin ball grid array (BGA), a 135-401 pin grid array (PGA)
and a 112-264 pin chip size package (CSP) are available as
packages for the new ICs.
A 5-million gate microchip packaged in a 352-pin BGA will be
50,000 yen (US$376) when purchased in bulk (minimum 10,000
units).
Information is available in English at:
http://www.hitachi.co.jp/New/cnews/E/980406B.html
(Nikkei
Microdevices)
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