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  • Intel to Invest US$100M in Samsung Electronics
  • January 25, 1999 (SEOUL) -- Samsung Electronics Co., Ltd. said it signed a letter of intent with Intel Corp. for the U.S firm to invest US$100 million into the Korean electronics company.
    According to the deal, Intel will undertake US$100 million worth of CBs to be newly issued by Samsung Electronics.

    "The capital will be injected into establishing production facilities for 72Mb, 144Mb and 288Mb Rambus DRAMs," said a Samsung official, adding the company has already launched the development of second-generation Rambus DRAMs, which will have a circuit design of 0.18 micron meters.

    "Through this deal, we hope to strengthen our ties with Intel in developing next-generation memory chips," he said.

    Intel, which has already participated in the equity of Samsung Electronics' memory chip production plant in Austin, Tex., seems to have decided on the investment in its strategy to secure a stable supply line of Rambus DRAMs to prepare for the next-generation PC market.

    The two companies plan to close the deal by the beginning of next month, as soon as they negotiate the details and receive approval from their respective board members and the government.

    Related story: Intel to Invest US$100 Million in Samsung

    (Maeil Business Newspaper, Korea)

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    Updated: Fri Jan 22 14:00:06 1999 PDT